The BSP298L6327HUSA1 is a SIPMOS MOSFET from Infineon, packaged in a SOT-223-4 surface mount package. It can handle a continuous drain current of 500mA and a drain to source voltage of 400V. The device has a maximum power dissipation of 1.8W and operates within a temperature range of -55°C to 150°C. It is not radiation hardened and is not RoHS compliant.
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| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 400pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 3R |
| RoHS Compliant | No |
| Series | SIPMOS® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| RoHS | Not CompliantNo |
