N-Channel Power MOSFET, 500V Vdss, 400mA continuous drain current, and 4 Ohm Rds On. This single-element silicon Metal-oxide Semiconductor FET features a 1.8W power dissipation and operates within a -55°C to 150°C temperature range. Packaged in a GREEN, SOT-223 plastic surface-mount case, it offers fast switching with an 8ns turn-on delay and 30ns fall time. The component is RoHS compliant and halogen-free.
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Infineon BSP299H6327XUSA1 technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 400mA |
| Drain to Source Resistance | 3.1R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.6mm |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Dual Supply Voltage | 500V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 4R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 8ns |
| Width | 3.5mm |
| RoHS | Compliant |
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