The BSP299L6327HUSA1 is a SIPMOS MOSFET with a maximum drain to source voltage of 500V and continuous drain current of 400mA. It features a fall time of 30ns and a maximum power dissipation of 1.8W. The device is packaged in a SOT-223-4 surface mount package and is RoHS compliant. The operating temperature range is from -55°C to 150°C.
PackageSOT-223-4
MountingSurface Mount
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Technical Specifications
Infineon BSP299L6327HUSA1 technical specifications.
General
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 400mA |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 400pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 4R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP299L6327HUSA1 Datasheet
Download the complete datasheet for Infineon BSP299L6327HUSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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