The BSP316PE6327 is a SIPMOS N-Channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source voltage of 100V and a continuous drain current of 680mA. The device is rated for a maximum power dissipation of 1.8W and has an on-resistance of 1.8 ohms. It is packaged in a TO-261-4 package and is available in a surface mount configuration. The BSP316PE6327 is a discrete semiconductor device from Infineon.
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Infineon BSP316PE6327 technical specifications.
| Package/Case | TO-261-4 |
| Continuous Drain Current (ID) | 680mA |
| Current Rating | -680mA |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 146pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 1.8R |
| Series | SIPMOS® |
| DC Rated Voltage | -100V |
| RoHS | Compliant |
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