N-Channel Power MOSFET, 60V Drain-Source Voltage, 2.6A Continuous Drain Current, and 90mΩ Rds On. This silicon Metal-Oxide-Semiconductor FET features a 1.6V nominal gate-source threshold voltage and 12ns turn-on delay. Packaged in a SOT-223 SMD/SMT format, it offers a maximum power dissipation of 1.8W and operates across a temperature range of -55°C to 150°C. RoHS compliant and halogen-free.
Infineon BSP318S technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Voltage (Vdss) | 60V |
| Dual Supply Voltage | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.6mm |
| Input Capacitance | 300pF |
| Length | 6.5mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Nominal Vgs | 1.6V |
| Packaging | Tape and Reel |
| Power Dissipation | 1.8W |
| Rds On Max | 90mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 1.6V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 12ns |
| Width | 6.7mm |
| RoHS | Compliant |
No datasheet is available for this part.
