N-channel MOSFET, 60V drain-source voltage, 2.6A continuous drain current, and 0.15-ohm drain-source resistance. Features include 1.8W power dissipation, 15ns fall time, and 20ns turn-off delay. This silicon, metal-oxide semiconductor FET is housed in a GREEN, plastic SOT-223 package, suitable for surface mounting. It offers a wide operating temperature range from -55°C to 150°C and is RoHS compliant with tin contact plating.
Sign in to ask questions about the Infineon BSP318SH6327XTSA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BSP318SH6327XTSA1 technical specifications.
| Package/Case | SOT-223 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 380pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 20ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSP318SH6327XTSA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
