N-channel MOSFET, 60V drain-source voltage, 2.6A continuous drain current, and 0.15-ohm drain-source resistance. Features include 1.8W power dissipation, 15ns fall time, and 20ns turn-off delay. This silicon, metal-oxide semiconductor FET is housed in a GREEN, plastic SOT-223 package, suitable for surface mounting. It offers a wide operating temperature range from -55°C to 150°C and is RoHS compliant with tin contact plating.
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
Power1.8W
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Technical Specifications
Infineon BSP318SH6327XTSA1 technical specifications.
General
| Package/Case | SOT-223 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 380pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP318SH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSP318SH6327XTSA1 to view detailed technical specifications.
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