P-channel, single-element, silicon Metal-oxide Semiconductor FET designed for surface mounting in a SOT-223 package. Features a continuous drain current of 980mA, a drain-to-source voltage of -100V, and a maximum power dissipation of 1.8W. Offers a low drain-to-source on-resistance of 900mR, with switching times including a turn-on delay of 5.9ns and a fall time of 8.5ns. Operates across a temperature range of -55°C to 150°C and is RoHS compliant with lead-free and halogen-free construction.
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Infineon BSP321PH6327XTSA1 technical specifications.
| Package/Case | SOT-223 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 980mA |
| Drain to Source Resistance | 900mR |
| Drain to Source Voltage (Vdss) | -100V |
| Fall Time | 8.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 319pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | -100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 900mR |
| RoHS Compliant | Yes |
| Series | SIPMOS™ |
| Turn-Off Delay Time | 16.5ns |
| Turn-On Delay Time | 5.9ns |
| Weight | 0.008826oz |
| RoHS | Compliant |
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