P-channel, single-element, silicon Metal-oxide Semiconductor FET designed for small signal applications. Features a continuous drain current of 1A and a drain-to-source voltage of -100V. Offers a low drain-to-source resistance of 1R and a maximum power dissipation of 1.8W. Packaged in a surface-mount SOT-223 plastic package with tin contact plating, this RoHS and halogen-free component operates between -55°C and 150°C.
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Infineon BSP322PH6327XTSA1 technical specifications.
| Package/Case | SOT-223 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | -100V |
| Fall Time | 8.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.6mm |
| Input Capacitance | 280pF |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Dual Supply Voltage | -100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 800mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 21.2ns |
| Turn-On Delay Time | 4.6ns |
| Width | 3.5mm |
| RoHS | Compliant |
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