BSP322PH6327XTSA1

P-channel, single-element, silicon Metal-oxide Semiconductor FET designed for small signal applications. Features a continuous drain current of 1A and a drain-to-source voltage of -100V. Offers a low drain-to-source resistance of 1R and a maximum power dissipation of 1.8W. Packaged in a surface-mount SOT-223 plastic package with tin contact plating, this RoHS and halogen-free component operates between -55°C and 150°C.