The BSP322PL6327 is a P-CHANNEL SIPMOS MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 100V and a continuous drain current of 1A. The device has a maximum power dissipation of 1.8W and a gate to source voltage of 20V. It is packaged in a SOT-223-4 surface mount package and is compliant with RoHS and SVHC regulations.
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Infineon BSP322PL6327 technical specifications.
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 4.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 372pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | -1.5V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 800mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 21.2ns |
| RoHS | Compliant |
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