INFINEON

BSP324H6327XTSA1

Datasheet

N-Channel MOSFET, 400V, 170mA, 25Ω, SOT-223

Infineon

BSP324H6327XTSA1

Name: BSP324H6327XTSA1 Infineon
Brand: Infineon
SKU: BSP324H6327XTSA1

N-Channel MOSFET, 400V, 170mA, 25Ω, SOT-223

N-Channel Power MOSFET, 400V Vdss, 170mA Continuous Drain Current, 25 Ohm Rds On. This single-element silicon Metal-Oxide Semiconductor FET features a 1.9V threshold voltage and a maximum power dissipation of 1.8W. Designed for surface mounting, it comes in a SOT-223 package with tin contact plating. Operating temperature range is -55°C to 150°C, with fast switching characteristics including a 4.6ns turn-on delay and 17ns turn-off delay.

PackageSOT-223

MountingSurface Mount

PolarityN-CHANNEL

Power1.8W

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Technical Specifications

Infineon BSP324H6327XTSA1 technical specifications.

General

Package/Case	SOT-223
Contact Plating	Tin
Continuous Drain Current (ID)	170mA
Drain to Source Resistance	13.6R
Drain to Source Voltage (Vdss)	400V
Fall Time	68ns
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Height	1.6mm
Input Capacitance	154pF
Lead Free	Lead Free
Length	6.5mm
Max Dual Supply Voltage	400V
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.8W
Mount	Surface Mount
Number of Elements	1
On-State Resistance	22R
Package Quantity	1000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	1.8W
Rds On Max	25R
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	SIPMOS®
Termination	SMD/SMT
Threshold Voltage	1.9V
Turn-Off Delay Time	17ns
Turn-On Delay Time	4.6ns
Width	3.5mm