Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
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Infineon BSP372L6327HTSA1 technical specifications.
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 14V |
| Input Capacitance | 520pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 310mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 20ns |
| RoHS | Compliant |
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