N-Channel MOSFET, 100V Vds, 1.8A Continuous Drain Current. Features 153mΩ Drain to Source Resistance at Vgs=10V, 230mΩ Rds On Max. Operates with a Gate to Source Voltage up to 20V and a Threshold Voltage of 1.4V. This single-element, surface-mount transistor is housed in a SOT-223 plastic package with tin plating, offering a maximum power dissipation of 1.8W. It is RoHS compliant and operates across a temperature range of -55°C to 150°C.
PackageSOT-223
MountingSurface Mount
Power1.8W
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Technical Specifications
Infineon BSP372NH6327XTSA1 technical specifications.
General
Package/Case
SOT-223
Contact Plating
Tin
Continuous Drain Current (ID)
1.8A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
153mR
Drain to Source Voltage (Vdss)
100V
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
1.7mm
Input Capacitance
329pF
Lead Free
Lead Free
Max Dual Supply Voltage
100V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.8W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
On-State Resistance
230mR
Package Quantity
1000
Packaging
Tape and Reel
Power Dissipation
1.8W
Rds On Max
230mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
OptiMOS™
Threshold Voltage
1.4V
Compliance
RoHS
Compliant
Datasheet
Infineon BSP372NH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSP372NH6327XTSA1 to view detailed technical specifications.
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