The BSP613PH6327XTSA1 is a P-CHANNEL MOSFET from Infineon, packaged in a SOT-223 case and featuring a maximum continuous drain current of 2.9A. It has a drain to source resistance of 110mR and can withstand a drain to source voltage of -60V. The device is rated for operation up to 150°C and has a maximum power dissipation of 1.8W. It is lead free and RoHS compliant, making it suitable for use in a variety of applications.
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Infineon BSP613PH6327XTSA1 technical specifications.
| Package/Case | SOT-223 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 2.9A |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | -60V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 875pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | -60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 130mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 26ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSP613PH6327XTSA1 to view detailed technical specifications.
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