The BSP62E6327 is a PNP transistor with a collector-emitter breakdown voltage of 300V and a maximum collector current of 500mA. It operates over a temperature range of -65°C to 150°C and has a maximum power dissipation of 1.5W. The transistor is packaged in a TO-261-4 package and is mounted using surface mount techniques. It is compliant with RoHS regulations.
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Infineon BSP62E6327 technical specifications.
| Package/Case | TO-261-4 |
| Collector Base Voltage (VCBO) | 90V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Current | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 1000 |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Series | BSP62 |
| Transition Frequency | 100MHz |
| Voltage | 80V |
| RoHS | Compliant |
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