The BSP62H6327XTSA1 is a surface mount NPN bipolar junction transistor from Infineon. It has a collector base voltage rating of 90V and a collector emitter breakdown voltage of 80V. The transistor can handle a maximum collector current of 10uA and a maximum power dissipation of 1.5W. It operates over a temperature range of -65°C to 150°C and is compliant with RoHS regulations. The BSP62H6327XTSA1 is packaged in a TO-261-4 package type.
PackageTO-261-4
MountingSurface Mount
Quick Jump:
Technical Specifications
Infineon BSP62H6327XTSA1 technical specifications.
General
| Package/Case | TO-261-4 |
| Collector Base Voltage (VCBO) | 90V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 1.8V |
| Max Collector Current | 10uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP62H6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSP62H6327XTSA1 to view detailed technical specifications.
No datasheet is available for this part.