This N-channel enhancement-mode MOSFET is rated for 240 V drain-source voltage and 0.35 A continuous drain current at 25 °C. It is a logic-level device in a PG-SOT223 package and is dv/dt rated for switching applications. The device specifies drain-source on-resistance up to 6.1 Ω at VGS = 10 V and up to 7.5 Ω at VGS = 4.5 V, with 1.8 W power dissipation at 25 °C. It operates over a junction and storage temperature range of -55 °C to +150 °C and uses Pb-free, RoHS-compliant lead plating.
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Infineon BSP89H6327 technical specifications.
| Number of Terminals | 4 |
| Terminal Position | DUAL |
| Pin Count | 4 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| REACH | Compliant |
| Military Spec | False |
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