N-Channel MOSFET, surface mount, featuring 240V drain-source voltage and 350mA continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 6-ohm drain-source resistance and 1.8W power dissipation. Designed for high-temperature operation up to 150°C, it includes fast switching characteristics with a 4ns turn-on delay and 18.4ns fall time. The component is halogen-free, lead-free, and RoHS compliant, packaged in a SOT-223 plastic package on tape and reel.
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Infineon BSP89H6327XTSA1 technical specifications.
| Package/Case | SOT-223 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 350mA |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 240V |
| Fall Time | 18.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 140pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 240V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Threshold Voltage | 1.4V |
| Turn-Off Delay Time | 15.9ns |
| Turn-On Delay Time | 4ns |
| Weight | 0.008826oz |
| RoHS | Compliant |
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