P-channel MOSFET, 250V drain-source voltage, 260mA continuous drain current, and 12 Ohm drain-to-source resistance. Features include a 1.5mm height, 6.5mm length, and 3.5mm width in a SOT-223 surface-mount package. This silicon, metal-oxide semiconductor FET operates from -55°C to 150°C with a 1.8W power dissipation. It offers a 5ns turn-on delay and 67ns turn-off delay, with tin contact plating and RoHS compliance.
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Infineon BSP92PH6327XTSA1 technical specifications.
| Package/Case | SOT-223 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 260mA |
| Drain to Source Resistance | 12R |
| Drain to Source Voltage (Vdss) | -250V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.5mm |
| Input Capacitance | 104pF |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Dual Supply Voltage | -250V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 12R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 67ns |
| Turn-On Delay Time | 5ns |
| Width | 3.5mm |
| RoHS | Compliant |
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