P-channel JFET transistor designed for small signal applications. Features a 60V breakdown voltage and a continuous drain current of 0.62A. This single-element silicon device utilizes a metal-oxide semiconductor construction. Housed in a 3-pin SC-59 plastic package, it offers dual terminal positions.
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Technical Specifications
Infineon BSR315PH6327XTSA1 technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.21.00.95 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon BSR315PH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSR315PH6327XTSA1 to view detailed technical specifications.
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