P-Channel JFET, surface mount, 1-element silicon transistor with 100V drain-to-source breakdown voltage and 360mA continuous drain current. Features 1.8 Ohm drain-to-source resistance, 6ns fall time, and -1.5V threshold voltage. Operates within a -55°C to 150°C temperature range, with 500mW maximum power dissipation. Packaged in a 3-pin SC-59 plastic case, tin-matte plated contacts, and supplied on tape and reel.
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Infineon BSR316PL6327HTSA1 technical specifications.
| Package/Case | SC |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 360mA |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 165pF |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 1.8R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Threshold Voltage | -1.5V |
| Width | 1.6mm |
| RoHS | Compliant |
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