
N-Channel Silicon JFET, surface mount, featuring 20V Drain-to-Source Voltage (Vdss) and 3.7A Continuous Drain Current (ID). Offers low on-state resistance of 17mR. Operates within a temperature range of -55°C to 150°C. Packaged in SC-59 with tin contact plating, this lead-free, RoHS compliant component is suitable for various electronic applications.
Infineon BSR802NL6327HTSA1 technical specifications.
| Package/Case | SC |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Resistance | 17mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 8V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 1.013nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| On-State Resistance | 23mR |
| Package Quantity | 3000 |
| Power Dissipation | 500mW |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSR802NL6327HTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.