The BSS119L6433HTMA1 is a SIPMOS JFET N-Channel transistor with a maximum drain to source voltage of 100V and continuous drain current of 170mA. It features a maximum power dissipation of 360mW and an on-resistance of 6 ohms. The device is packaged in a TO-236-3 small outline package and is suitable for surface mount applications. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
PackageTO-236-3
MountingSurface Mount
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Technical Specifications
Infineon BSS119L6433HTMA1 technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 170mA |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 78pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 6R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSS119L6433HTMA1 Datasheet
Download the complete datasheet for Infineon BSS119L6433HTMA1 to view detailed technical specifications.
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