Infineon
BSS119NH6433XTMA1
Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
PackageSOT-23-3
MountingSurface Mount
Power500mW
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Technical Specifications
Infineon BSS119NH6433XTMA1 technical specifications.
General
| Package/Case | SOT-23-3 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 190mA |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 2.915R |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 20.9pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 500mW |
| Rds On Max | 6R |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSS119NH6433XTMA1 Datasheet
Download the complete datasheet for Infineon BSS119NH6433XTMA1 to view detailed technical specifications.
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