Infineon
BSS123NH6327
Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
PackageSOT-23-3
MountingSurface Mount
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Technical Specifications
Infineon BSS123NH6327 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 190mA |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 7.4ns |
| Turn-On Delay Time | 2.3ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSS123NH6327 Datasheet
Download the complete datasheet for Infineon BSS123NH6327 to view detailed technical specifications.
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