N-channel, silicon, Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for surface mounting in a SOT-23 package. Features a continuous drain current of 190mA and a drain-to-source breakdown voltage of 100V. Offers a low on-state resistance of 6 Ohms, with turn-on delay time of 2.3ns and turn-off delay time of 7.4ns. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 500mW. This component is halogen-free, lead-free, and RoHS compliant.
PackageSOT-23
MountingSurface Mount
PolarityN-CHANNEL
Power500mW
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Technical Specifications
Infineon BSS123NH6327XTSA1 technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
190mA
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
6R
Drain to Source Voltage (Vdss)
100V
Fall Time
22ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
1mm
Input Capacitance
20.9pF
Lead Free
Lead Free
Length
2.9mm
Max Dual Supply Voltage
100V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
On-State Resistance
6R
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
500mW
Radiation Hardening
No
Rds On Max
6R
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
7.4ns
Turn-On Delay Time
2.3ns
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Infineon BSS123NH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSS123NH6327XTSA1 to view detailed technical specifications.
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