INFINEON

BSS126H6327XTSA2

Datasheet

N-Channel MOSFET, 600V, 21mA, 500R Rds(on), SOT-23

Infineon

BSS126H6327XTSA2

Name: BSS126H6327XTSA2 Infineon
Brand: Infineon
SKU: BSS126H6327XTSA2

N-Channel MOSFET, 600V, 21mA, 500R Rds(on), SOT-23

N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) for surface mount applications. Features a 600V Drain to Source Voltage (Vdss) and a continuous drain current (ID) of 21mA. Offers a low on-state resistance of 500 Ohms and a drain-source resistance of 700 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. Packaged in a compact SOT-23 plastic package, it is halogen-free and RoHS compliant.

PackageSOT-23

Resistance700R

MountingSurface Mount

Power500mW

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Technical Specifications

Infineon BSS126H6327XTSA2 technical specifications.

General

Package/Case	SOT-23
Contact Plating	Tin, Matte
Continuous Drain Current (ID)	21mA
Drain to Source Resistance	700R
Drain to Source Voltage (Vdss)	600V
Element Configuration	Single
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Height	1mm
Input Capacitance	28pF
Lead Free	Lead Free
Length	2.9mm
Max Dual Supply Voltage	600V
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	500mW
Mount	Surface Mount
Number of Elements	1
On-State Resistance	500R
Package Quantity	3000
Packaging	Tape and Reel
Power Dissipation	500mW
Radiation Hardening	No
Rds On Max	500R
Resistance	700R
RoHS Compliant	Yes
Series	SIPMOS®
Width	1.3mm