N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) for surface mount applications. Features a 600V Drain to Source Voltage (Vdss) and a continuous drain current (ID) of 21mA. Offers a low on-state resistance of 500 Ohms and a drain-source resistance of 700 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. Packaged in a compact SOT-23 plastic package, it is halogen-free and RoHS compliant.
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| Package/Case | SOT-23 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 21mA |
| Drain to Source Resistance | 700R |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1mm |
| Input Capacitance | 28pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 500R |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Rds On Max | 500R |
| Resistance | 700R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Width | 1.3mm |
| RoHS | Compliant |
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