BSS126H6327XTSA2

N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) for surface mount applications. Features a 600V Drain to Source Voltage (Vdss) and a continuous drain current (ID) of 21mA. Offers a low on-state resistance of 500 Ohms and a drain-source resistance of 700 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. Packaged in a compact SOT-23 plastic package, it is halogen-free and RoHS compliant.