Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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Infineon BSS127H6327 technical specifications.
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 21mA |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 115ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 28pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Rds On Max | 500R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 6.1ns |
| Width | 1.3mm |
| RoHS | Compliant |
No datasheet is available for this part.
