Infineon
BSS138NE6327
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
PackageTO-236-3
Current Rating230mA
MountingSurface Mount
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Technical Specifications
Infineon BSS138NE6327 technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 230mA |
| Current Rating | 230mA |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 8.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 41pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 3.5R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 6.7ns |
| Turn-On Delay Time | 2.3ns |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSS138NE6327 Datasheet
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