N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for surface mounting in a SOT-23 plastic package. Features a continuous drain current of 230mA, a drain-to-source voltage of 60V, and a maximum power dissipation of 360mW. Offers a low on-state resistance of 3.5 Ohms and fast switching speeds with turn-on delay time of 2.3ns and fall time of 8.2ns. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageSOT-23
Voltage50V
Current2A
MountingSurface Mount
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Technical Specifications
Infineon BSS138NH6327XTSA2 technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
230mA
Current
2A
Drain to Source Resistance
2.2R
Drain to Source Voltage (Vdss)
60V
Fall Time
8.2ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
41pF
Lead Free
Lead Free
Max Dual Supply Voltage
60V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Number of Elements
1
On-State Resistance
3.5R
Package Quantity
3000
Packaging
Tape and Reel
Power Dissipation
360mW
Radiation Hardening
No
Rds On Max
3.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SIPMOS®
Termination
SMD/SMT
Threshold Voltage
1V
Turn-Off Delay Time
6.7ns
Turn-On Delay Time
2.3ns
Voltage
50V
Width
3.05mm
Compliance
RoHS
Compliant
Datasheet
Infineon BSS138NH6327XTSA2 Datasheet
Download the complete datasheet for Infineon BSS138NH6327XTSA2 to view detailed technical specifications.
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