N-channel silicon MOSFET, surface mount, SOT-323 package. Features 60V drain-source voltage, 280mA continuous drain current, and 3.5 Ohm on-state resistance. Operates from -55°C to 150°C with 500mW power dissipation. Includes 2.2ns turn-on delay and 6.7ns turn-off delay. Halogen and lead-free, RoHS compliant.
PackageSOT-323
Voltage50V
Current2A
MountingSurface Mount
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Technical Specifications
Infineon BSS138WH6327XTSA1 technical specifications.
General
Package/Case
SOT-323
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
280mA
Current
2A
Drain to Source Resistance
3.5R
Drain to Source Voltage (Vdss)
60V
Fall Time
8.2ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
0.8mm
Input Capacitance
43pF
Lead Free
Lead Free
Length
2mm
Max Dual Supply Voltage
60V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
On-State Resistance
3.5R
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
500mW
Radiation Hardening
No
Rds On Max
3.5R
RoHS Compliant
Yes
Series
SIPMOS®
Threshold Voltage
1V
Turn-Off Delay Time
6.7ns
Turn-On Delay Time
2.2ns
Voltage
50V
Weight
0.004395oz
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Infineon BSS138WH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSS138WH6327XTSA1 to view detailed technical specifications.
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