N-Channel Silicon Metal-Oxide Semiconductor FET for small signal applications. Features a 250V Drain to Source Voltage (Vdss) and 100mA Continuous Drain Current (ID). Surface mountable in a SOT-23 plastic package with tin, matte contact plating. Offers a nominal Gate to Source Voltage (Vgs) of -1.4V and an On-State Resistance (Rds On) of 14 Ohms. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 360mW.
PackageSOT-23
MountingSurface Mount
Power360mW
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Technical Specifications
Infineon BSS139H6327XTSA1 technical specifications.
General
Package/Case
SOT-23
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
100mA
Drain to Source Resistance
7.8R
Drain to Source Voltage (Vdss)
250V
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
76pF
Lead Free
Lead Free
Max Dual Supply Voltage
250V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Nominal Vgs
-1.4V
Number of Channels
1
Number of Elements
1
On-State Resistance
14R
Package Quantity
3000
Packaging
Tape and Reel
Power Dissipation
360mW
Radiation Hardening
No
Rds On Max
14R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SIPMOS®
Termination
SMD/SMT
Threshold Voltage
-1.4V
Width
3.05mm
Compliance
RoHS
Compliant
Datasheet
Infineon BSS139H6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSS139H6327XTSA1 to view detailed technical specifications.
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