BSS139H6327XTSA1

Datasheet

N-Channel JFET, 250V, 100mA, SOT-23, Surface Mount

Infineon

BSS139H6327XTSA1

Name: BSS139H6327XTSA1 Infineon
Brand: Infineon
SKU: BSS139H6327XTSA1

N-Channel JFET, 250V, 100mA, SOT-23, Surface Mount

N-Channel Silicon Metal-Oxide Semiconductor FET for small signal applications. Features a 250V Drain to Source Voltage (Vdss) and 100mA Continuous Drain Current (ID). Surface mountable in a SOT-23 plastic package with tin, matte contact plating. Offers a nominal Gate to Source Voltage (Vgs) of -1.4V and an On-State Resistance (Rds On) of 14 Ohms. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 360mW.

PackageSOT-23

MountingSurface Mount

Power360mW

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Technical Specifications

Infineon BSS139H6327XTSA1 technical specifications.

General

Package/Case	SOT-23
Contact Plating	Tin, Matte
Continuous Drain Current (ID)	100mA
Drain to Source Resistance	7.8R
Drain to Source Voltage (Vdss)	250V
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Input Capacitance	76pF
Lead Free	Lead Free
Max Dual Supply Voltage	250V
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	360mW
Mount	Surface Mount
Nominal Vgs	-1.4V
Number of Channels	1
Number of Elements	1
On-State Resistance	14R
Package Quantity	3000
Packaging	Tape and Reel
Power Dissipation	360mW
Radiation Hardening	No
Rds On Max	14R
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	SIPMOS®
Termination	SMD/SMT
Threshold Voltage	-1.4V
Width	3.05mm