N-Channel Silicon Metal-Oxide Semiconductor FET for small signal applications. Features a 250V Drain to Source Voltage (Vdss) and 100mA Continuous Drain Current (ID). Surface mountable in a SOT-23 plastic package with tin, matte contact plating. Offers a nominal Gate to Source Voltage (Vgs) of -1.4V and an On-State Resistance (Rds On) of 14 Ohms. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 360mW.
PackageSOT-23
MountingSurface Mount
Power360mW
Quick Jump:
Technical Specifications
Infineon BSS139H6327XTSA1 technical specifications.
General
| Package/Case | SOT-23 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Resistance | 7.8R |
| Drain to Source Voltage (Vdss) | 250V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 76pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 250V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Nominal Vgs | -1.4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 14R |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Power Dissipation | 360mW |
| Radiation Hardening | No |
| Rds On Max | 14R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Termination | SMD/SMT |
| Threshold Voltage | -1.4V |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSS139H6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSS139H6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
