N-channel silicon JFET, surface mountable in a 3-pin SOT-23 plastic package. Features a continuous drain current of 170mA and a drain-to-source voltage of 100V. Offers a low on-state resistance of 6 Ohms and a maximum power dissipation of 360mW. Operates across a temperature range of -55°C to 150°C. RoHS and Halogen Free compliant with tin-matte contact plating.
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Infineon BSS169H6327XTSA1 technical specifications.
| Package/Case | SOT-23 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 170mA |
| Drain to Source Resistance | 12R |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1mm |
| Input Capacitance | 68pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 6R |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Power Dissipation | 360mW |
| Radiation Hardening | No |
| Rds On Max | 6R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Width | 1.3mm |
| RoHS | Compliant |
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