The BSS192PE6327 is a SIPMOS JFET N-Channel transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1W and a maximum drain to source voltage of 250V. The transistor is packaged in a TO-243AA package and is mounted using surface mount technology. It has a maximum continuous drain current of 190mA and a maximum Rds on of 12 ohms. The BSS192PE6327 is not RoHS compliant.
PackageTO-243AA
Current Rating-190mA
MountingSurface Mount
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Technical Specifications
Infineon BSS192PE6327 technical specifications.
General
| Package/Case | TO-243AA |
| Continuous Drain Current (ID) | 190mA |
| Current Rating | -190mA |
| Drain to Source Voltage (Vdss) | 250V |
| Input Capacitance | 104pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 12R |
| RoHS Compliant | No |
| Series | SIPMOS® |
| DC Rated Voltage | -250V |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon BSS192PE6327 Datasheet
Download the complete datasheet for Infineon BSS192PE6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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