P-Channel JFET, designed for small signal applications. Features a continuous drain current of 630mA and a drain-to-source breakdown voltage of -20V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. Surface mountable in a SOT-323 package, this silicon MOSFET offers a low on-state resistance of 550mR and fast switching times with turn-on delay of 2.6ns and turn-off delay of 6ns. Halogen and lead-free, it is supplied on tape and reel.
PackageSOT-323
Current Rating-580mA
MountingSurface Mount
Power300mW
Quick Jump:
Technical Specifications
Infineon BSS209PWH6327XTSA1 technical specifications.
General
| Package/Case | SOT-323 |
| Continuous Drain Current (ID) | 630mA |
| Current Rating | -580mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Voltage (Vdss) | -20V |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Height | 0.8mm |
| Input Capacitance | 115pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Dual Supply Voltage | -20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 550mR |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 6ns |
| Turn-On Delay Time | 2.6ns |
| DC Rated Voltage | -20V |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSS209PWH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSS209PWH6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
