N-Channel Silicon Metal-Oxide Semiconductor FET, a single-element JFET designed for surface mounting in a SOT-23 package. Features a continuous drain current of 1.5A and a drain-to-source voltage of 20V. Offers a gate-to-source voltage of 12V and a maximum power dissipation of 500mW. This RoHS compliant component operates within a temperature range of -55°C to 150°C and is halogen-free.
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Infineon BSS214NH6327XTSA1 technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Input Capacitance | 143pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 500mW |
| Rds On Max | 140mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
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