BSS214NWH6327XTSA1

N-Channel Silicon Metal-oxide Semiconductor FET (MOSFET) for small signal applications. Features a 20V Drain-to-Source Voltage (Vdss) and 1.5A Continuous Drain Current (ID). Offers low on-state resistance of 140mR at a Gate-to-Source Voltage (Vgs) of 12V. Packaged in a compact SOT-323 surface-mount plastic package, this device is halogen-free and lead-free, suitable for operation across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 4.1ns and fall time of 1.4ns.