The BSS215PL6327 is a P-channel junction field-effect transistor (JFET) from Infineon, packaged in a small outline R-PDSO-G3 package. It has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The transistor has a maximum power dissipation of 500mW and a maximum drain to source breakdown voltage of 20V. It is RoHS compliant and features a surface mount package.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power500mW
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Technical Specifications
Infineon BSS215PL6327 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 9.7ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 346pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 14.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSS215PL6327 Datasheet
Download the complete datasheet for Infineon BSS215PL6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.