N-Channel JFET, 600V Vdss, 90mA continuous drain current, and 28Ω drain-to-source resistance. This surface-mount transistor features a 1W power dissipation, 131pF input capacitance, and 41ns fall time. Operates from -55°C to 150°C, housed in a SOT-89 plastic package.
PackageSOT-89
MountingSurface Mount
PolarityN-CHANNEL
Power1W
Quick Jump:
Technical Specifications
Infineon BSS225H6327FTSA1 technical specifications.
General
| Package/Case | SOT-89 |
| Continuous Drain Current (ID) | 90mA |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 28R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 41ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 131pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 45R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 62ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSS225H6327FTSA1 Datasheet
Download the complete datasheet for Infineon BSS225H6327FTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
