N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for surface mounting in a SOT-89-4 package. Features a 600V drain-to-source breakdown voltage and a continuous drain current of 90mA. Offers a low drain-to-source on-resistance of 45 Ohms and a maximum power dissipation of 1W. Operates within a temperature range of -55°C to +150°C, with fast switching characteristics including a 14ns turn-on delay and 38ns fall time. This lead-free, RoHS-compliant component is supplied on tape and reel.
PackageSOT-89-4
Current Rating90mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon BSS225L6327 technical specifications.
General
| Package/Case | SOT-89-4 |
| Continuous Drain Current (ID) | 90mA |
| Current Rating | 90mA |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 45R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 131pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Nominal Vgs | 1.9V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 45R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSS225L6327 Datasheet
Download the complete datasheet for Infineon BSS225L6327 to view detailed technical specifications.
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