N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for surface mounting in a SOT-23 plastic package. Features a continuous drain current of 2.3A and a drain-to-source breakdown voltage of 30V. Offers a low on-state resistance of 57mR at a gate-source voltage of 10V. Operates across a wide temperature range from -55°C to 150°C. This component is RoHS compliant and halogen-free.
PackageSOT-23
MountingSurface Mount
Power500mW
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Technical Specifications
Infineon BSS306NH6327XTSA1 technical specifications.
General
Package/Case
SOT-23
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
2.3A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
44mR
Drain to Source Voltage (Vdss)
30V
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
1.1mm
Input Capacitance
275pF
Lead Free
Lead Free
Max Dual Supply Voltage
30V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
On-State Resistance
57mR
Package Quantity
3000
Packaging
Tape and Reel
Power Dissipation
500mW
Radiation Hardening
No
Rds On Max
57mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
OptiMOS™
Threshold Voltage
1.2V
Compliance
RoHS
Compliant
Datasheet
Infineon BSS306NH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSS306NH6327XTSA1 to view detailed technical specifications.
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