N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for surface mounting in a SOT-23 plastic package. Features a continuous drain current of 2.3A and a drain-to-source breakdown voltage of 30V. Offers a low on-state resistance of 57mR at a gate-source voltage of 10V. Operates across a wide temperature range from -55°C to 150°C. This component is RoHS compliant and halogen-free.
Sign in to ask questions about the Infineon BSS306NH6327XTSA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BSS306NH6327XTSA1 technical specifications.
| Package/Case | SOT-23 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 44mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 275pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 57mR |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Rds On Max | 57mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1.2V |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSS306NH6327XTSA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
