Infineon
BSS306NL6327
Small Signal Field-Effect Transistor, 2.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Power500mW
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Technical Specifications
Infineon BSS306NL6327 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 57mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 275pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 57mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 8.3ns |
| Turn-On Delay Time | 4.4ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSS306NL6327 Datasheet
Download the complete datasheet for Infineon BSS306NL6327 to view detailed technical specifications.
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