P-channel, silicon, metal-oxide semiconductor FET designed for small signal applications. Features a continuous drain current of 1.5A and a drain-to-source voltage of -30V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. Packaged in a 3-pin SOT-23 surface-mount plastic package, this component is halogen-free and RoHS compliant.
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Infineon BSS314PEH6327XTSA1 technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | -30V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 294pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | -30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Rds On Max | 140mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
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