N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for surface mounting in a SOT-23 plastic package. Features a continuous drain current of 1.4A, 30V drain-to-source breakdown voltage, and 160mR maximum on-state resistance. Operates across a wide temperature range from -55°C to 150°C with 500mW maximum power dissipation. Includes a 1.6V threshold voltage and fast switching times with a 1ns fall time.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon BSS316NH6327XTSA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 1.4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 119mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 94pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| On-State Resistance | 160mR |
| Package Quantity | 3000 |
| Power Dissipation | 500mW |
| Rds On Max | 160mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1.6V |
| Turn-Off Delay Time | 5.8ns |
| Turn-On Delay Time | 3.4ns |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSS316NH6327XTSA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
