The BSS606NH6327XTSA1 is a surface mount N-CHANNEL junction field-effect transistor with a maximum continuous drain current of 3.2A and a maximum drain to source voltage of 60V. It features a drain to source resistance of 60mR and a gate to source voltage of 20V. The device is packaged in a halogen-free and lead-free SOT-89 package and is compliant with RoHS regulations. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 1W.
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Infineon BSS606NH6327XTSA1 technical specifications.
| Package/Case | SOT-89 |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 657pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
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