N-channel silicon MOSFET, surface mountable in a SOT-23 package. Features a continuous drain current of 2.3A, drain-to-source voltage of 20V, and low on-resistance of 57mR. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 500mW. Includes fast switching characteristics with turn-on delay time of 7.5ns and fall time of 3.7ns. Halogen and lead-free, RoHS compliant.
PackageSOT-23
MountingSurface Mount
PolarityN-CHANNEL
Power500mW
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Technical Specifications
Infineon BSS806NEH6327XTSA1 technical specifications.
General
Package/Case
SOT-23
Contact Plating
Tin
Continuous Drain Current (ID)
2.3A
Drain to Source Resistance
57mR
Drain to Source Voltage (Vdss)
20V
Fall Time
3.7ns
Gate to Source Voltage (Vgs)
8V
Halogen Free
Halogen Free
Height
1mm
Input Capacitance
529pF
Lead Free
Lead Free
Length
2.9mm
Max Dual Supply Voltage
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
500mW
Rds On Max
57mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
12ns
Turn-On Delay Time
7.5ns
Weight
0.050717oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Infineon BSS806NEH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSS806NEH6327XTSA1 to view detailed technical specifications.
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