N-Channel Silicon Metal-Oxide Semiconductor FET for small signal applications. Features a 20V drain-source voltage (Vdss) and a continuous drain current (ID) of 2.3A. Offers a low on-state resistance of 57mR (Rds On Max) and 41mR drain-to-source resistance. Packaged in a compact SOT-23 surface-mount plastic package, this single-element JFET operates from -55°C to 150°C and is RoHS compliant and halogen-free.
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Infineon BSS806NH6327XTSA1 technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Resistance | 41mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 8V |
| Halogen Free | Halogen Free |
| Height | 1mm |
| Input Capacitance | 529pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Dual Supply Voltage | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| On-State Resistance | 57mR |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Power Dissipation | 500mW |
| Rds On Max | 57mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Width | 1.3mm |
| RoHS | Compliant |
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