N-Channel Silicon Metal-oxide Semiconductor FET, a surface mount JFET in a SOT-323 plastic package. Features 20V Drain to Source Voltage (Vdss), 1.4A Continuous Drain Current (ID), and 160mR On-State Resistance (Rds On Max). Operates from -55°C to 150°C with 500mW Power Dissipation. Includes 5.3ns Turn-On Delay Time and 11ns Turn-Off Delay Time.
PackageSOT-323
MountingSurface Mount
PolarityN-CHANNEL
Power500mW
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Technical Specifications
Infineon BSS816NWH6327XTSA1 technical specifications.
General
Package/Case
SOT-323
Contact Plating
Tin
Continuous Drain Current (ID)
1.4A
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
20V
Fall Time
2.2ns
Gate to Source Voltage (Vgs)
8V
Halogen Free
Halogen Free
Input Capacitance
180pF
Lead Free
Lead Free
Max Dual Supply Voltage
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Channels
1
On-State Resistance
160mR
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
500mW
Rds On Max
160mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
OptiMOS™
Threshold Voltage
550mV
Turn-Off Delay Time
11ns
Turn-On Delay Time
5.3ns
Weight
0.004395oz
Compliance
RoHS
Compliant
Datasheet
Infineon BSS816NWH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSS816NWH6327XTSA1 to view detailed technical specifications.
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