N-Channel Silicon Metal-oxide Semiconductor FET, a surface mount JFET in a SOT-323 plastic package. Features 20V Drain to Source Voltage (Vdss), 1.4A Continuous Drain Current (ID), and 160mR On-State Resistance (Rds On Max). Operates from -55°C to 150°C with 500mW Power Dissipation. Includes 5.3ns Turn-On Delay Time and 11ns Turn-Off Delay Time.
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| Package/Case | SOT-323 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 1.4A |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 2.2ns |
| Gate to Source Voltage (Vgs) | 8V |
| Halogen Free | Halogen Free |
| Input Capacitance | 180pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| On-State Resistance | 160mR |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 160mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 550mV |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 5.3ns |
| Weight | 0.004395oz |
| RoHS | Compliant |
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