P-channel JFET, surface mount, in a SOT-23 plastic package. Features a continuous drain current of 330mA and a drain-to-source voltage of -60V. Offers a gate-to-source voltage of 20V and a threshold voltage of -1.5V. Maximum power dissipation is 360mW with an on-state resistance of 2 Ohms. This RoHS compliant component operates from -55°C to 150°C.
PackageSOT-23
MountingSurface Mount
Power360mW
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Technical Specifications
Infineon BSS83PH6327XTSA1 technical specifications.
General
Package/Case
SOT-23
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
330mA
Drain to Source Voltage (Vdss)
-60V
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
1mm
Input Capacitance
78pF
Lead Free
Lead Free
Length
2.9mm
Max Dual Supply Voltage
-60V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
On-State Resistance
2R
Package Quantity
3000
Packaging
Tape and Reel
Power Dissipation
360mW
Radiation Hardening
No
Rds On Max
2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SIPMOS®
Threshold Voltage
-1.5V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Infineon BSS83PH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSS83PH6327XTSA1 to view detailed technical specifications.
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