P-channel JFET, surface mount, in a SOT-23 plastic package. Features a continuous drain current of 330mA and a drain-to-source voltage of -60V. Offers a gate-to-source voltage of 20V and a threshold voltage of -1.5V. Maximum power dissipation is 360mW with an on-state resistance of 2 Ohms. This RoHS compliant component operates from -55°C to 150°C.
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Infineon BSS83PH6327XTSA1 technical specifications.
| Package/Case | SOT-23 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 330mA |
| Drain to Source Voltage (Vdss) | -60V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1mm |
| Input Capacitance | 78pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Dual Supply Voltage | -60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 2R |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Power Dissipation | 360mW |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Threshold Voltage | -1.5V |
| Width | 1.3mm |
| RoHS | Compliant |
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