Infineon
BSS84P-E6327
Small Signal Field-Effect Transistor, 0.17A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
PackageTO-236-3
Current Rating-170mA
MountingSurface Mount
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Technical Specifications
Infineon BSS84P-E6327 technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
170mA
Current Rating
-170mA
Drain to Source Resistance
8R
Drain to Source Voltage (Vdss)
60V
Input Capacitance
19pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Package Quantity
1
Packaging
Cut Tape
Rds On Max
8R
RoHS Compliant
Yes
Series
SIPMOS®
DC Rated Voltage
-60V
Compliance
RoHS
Compliant
Datasheet
Infineon BSS84P-E6327 Datasheet
Download the complete datasheet for Infineon BSS84P-E6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.