The BSS84P-E6327 is a SIPMOS N-Channel JFET transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 360mW and a drain to source voltage of 60V. The transistor features a drain to source resistance of 8R and a current rating of -170mA. It is packaged in a TO-236-3 surface mount package and is RoHS compliant.
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Infineon BSS84P-E6327 technical specifications.
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 170mA |
| Current Rating | -170mA |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance | 19pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 8R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| DC Rated Voltage | -60V |
| RoHS | Compliant |
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