P-channel, single-element silicon MOSFET for small signal applications. Features a continuous drain current of 170mA and a drain-to-source voltage of -60V. Offers a low on-state resistance of 8 Ohms and a drain-to-source resistance of 12 Ohms. Packaged in a compact SOT-23 surface-mount plastic package with tin, matte plating, and supplied on tape and reel. Operates across a wide temperature range from -55°C to 150°C.
PackageSOT-23
Voltage60V
Resistance12R
MountingSurface Mount
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Technical Specifications
Infineon BSS84PH6327XTSA2 technical specifications.
General
Package/Case
SOT-23
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
170mA
Drain to Source Resistance
12R
Drain to Source Voltage (Vdss)
-60V
Element Configuration
Single
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
900um
Input Capacitance
19pF
Lead Free
Lead Free
Length
2.9mm
Max Dual Supply Voltage
-60V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Nominal Vgs
-1.5V
Number of Channels
1
Number of Elements
1
On-State Resistance
8R
Package Quantity
3000
Packaging
Tape and Reel
Power Dissipation
360mW
Radiation Hardening
No
Rds On Max
8R
Reach SVHC Compliant
No
Resistance
12R
RoHS Compliant
Yes
Series
SIPMOS®
Threshold Voltage
-1.5V
Voltage
60V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Infineon BSS84PH6327XTSA2 Datasheet
Download the complete datasheet for Infineon BSS84PH6327XTSA2 to view detailed technical specifications.
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